INTRINSIC AND EXTRINSIC DEFECTS IN SEMICONDUCTORS STUDIED BY PERTURBED GAMMA-GAMMA ANGULAR-CORRELATION SPECTROSCOPY

Authors
WICHERT T
Citation
T. Wichert, INTRINSIC AND EXTRINSIC DEFECTS IN SEMICONDUCTORS STUDIED BY PERTURBED GAMMA-GAMMA ANGULAR-CORRELATION SPECTROSCOPY, Applied physics A: Materials science & processing, 61(2), 1995, pp. 207-212
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Applied physics A: Materials science & processing → ACNP
ISSN journal
09478396
Volume
61
Issue
2
Year of publication
1995
Pages
207 - 212
Database
ISI
SICI code
0947-8396(1995)61:2<207:IAEDIS>2.0.ZU;2-1
Abstract
The application of the perturbed gamma gamma angular correlation techn ique as an analytical tool for the characterisation of atomic defect c onfigurations is discussed. Using the radioactive probe atom In-111/Cd -111, recent results on the compensation of acceptor and donor atoms i n different II-VI semiconductors will be discussed, in particular the role of the cation vacancy defect.