DEPTH PROFILING OF COPPER THIN-FILMS BY RESONANT LASER-ABLATION

In Resonant Laser Ablation (RLA), material is ablated and selectively ionized by a low-energy pulse from a tunable laser. The selectivity an d efficiency allow detection and quantitation at very low concentratio ns. We demonstrate that RLA has potential use in profiling thin layer and multilayer structures. Quantitative results are reported on the an alysis of 20 and 100 Angstrom copper thin films on Si(110) surfaces. R emoval rates range from 10(-3) to 10(-2) Angstrom/shot. Prospects for interrogation of dopants and impurities are also evaluated.