Silicon-germanium strained layer materials in microelectronics

Authors
Paul, DJ
Citation
Dj. Paul, Silicon-germanium strained layer materials in microelectronics, ADVAN MATER, 11(3), 1999, pp. 191
Citations number
103
Categorie Soggetti
Multidisciplinary,"Material Science & Engineering
Journal title
ADVANCED MATERIALS
ISSN journal
09359648 → ACNP
Volume
11
Issue
3
Year of publication
1999
Database
ISI
SICI code
0935-9648(19990211)11:3<191:SSLMIM>2.0.ZU;2-I
Abstract
The use of Si1-xGex in microelectronics production is appealing not only be cause it is compatible with existing industrial technology used for the pro duction of silicon-based microelectronics, but also because the induced str ain caused by insertion of a layer of Si1-xGex (see Figure) can significant ly improve their performance. The production and properties of these new ma terials are reviewed.