The performance of organic LEDs can be improved by modifying the organic th
in film-electrode interface. Here is reported the use of layer-by-layer, se
lf-limiting chemisorptive siloxane self-assembly techniques to deposit laye
rs of the capping agent octachlorotrisiloxane between an indium tin oxide a
node layer and the hole transport layer. Such techniques can yield nearly p
inhole-free dielectric layers with angstrom-level control over total dielec
tric layer thickness. Examination of the physical and electronic properties
of the resulting devices shows that the external quantum and luminous effi
ciencies of the LED are significantly enhanced after the introduction of th
e dielectric layers.