Electron dynamics of Cs anti-bonding surface state on copper

Citation
S. Ogawa et al., Electron dynamics of Cs anti-bonding surface state on copper, APP PHYS B, 68(3), 1999, pp. 611-614
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS B-LASERS AND OPTICS
ISSN journal
09462171 → ACNP
Volume
68
Issue
3
Year of publication
1999
Pages
611 - 614
Database
ISI
SICI code
0946-2171(199903)68:3<611:EDOCAS>2.0.ZU;2-1
Abstract
Electron dynamics induced by direct photoexcitation of the anti-bonding sta te on Cs/Cu(111) and Cs/Cu(100) are studied by the interferometric time-res olved two-photon photoemission. Femtosecond resolution pump-probe correlati on measurements indicate a lifetime of the Cs anti-bonding state of 50 fs o n Cu(111) at 50 K, while for Cu(100) only an upper limit of 5 fs can be est imated. Below the Ca antibonding peak maximum for Cs/Cu(111), the populatio n relaxation is non-exponential and appears to have a delayed rise which mo ves to longer delay times for lower probe energies. The population dynamics of the unoccupied state suggests a dissociative motion of Ca atoms leading to the photostimulated desorption.