Optical determination of interface roughness in multilayered semiconductorstructures

Citation
M. Mazilu et al., Optical determination of interface roughness in multilayered semiconductorstructures, APP PHYS B, 68(3), 1999, pp. 633-636
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS B-LASERS AND OPTICS
ISSN journal
09462171 → ACNP
Volume
68
Issue
3
Year of publication
1999
Pages
633 - 636
Database
ISI
SICI code
0946-2171(199903)68:3<633:ODOIRI>2.0.ZU;2-F
Abstract
We have developed a new approach (the LQR method) for calculating the refle ctivity and transmission spectra of a multilayer optical material with N in terfaces, as an alternative to the matrix method. The approach allows the i nclusion of the effects of interface roughness by introducing a "rough" ele ment between adjacent layers. For this purpose we have developed an empiric al model, which describes the effect of interface roughness on an optical b eam passing through or being reflected from an interface. An assessment of the interface roughness of a multilayer structure was carried out by fittin g the experimental reflectivity spectrum of GaAs/AlGaAs multiple quantum we ll samples with and without oxidation of the barrier layers. The refractive index and the thickness of the oxidised layers were also obtained from the fit.