A new photoresist based on calix[4]resorcinarene dendrimer

Citation
O. Haba et al., A new photoresist based on calix[4]resorcinarene dendrimer, CHEM MATER, 11(2), 1999, pp. 427-432
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
CHEMISTRY OF MATERIALS
ISSN journal
08974756 → ACNP
Volume
11
Issue
2
Year of publication
1999
Pages
427 - 432
Database
ISI
SICI code
0897-4756(199902)11:2<427:ANPBOC>2.0.ZU;2-E
Abstract
A new dendrimer (1), which contains phenol groups in the exterior for solub ilization in aqueous alkaline solution and calix[4]resorcinarene in the int erior to increase the molecular weight and number of the phenol group even in the lower generation, was designed as new negative-working, alkaline-dev elopable photoresist material. A negative-working photoresist based on 1, 2 ,6-bis(hydroxymethyl)phenol as cross-linker, and diphenyliodonium 9,10-dime thoxyanthracene-2-sulfonate as a photoacid generator has been developed. Th is resist gave a clear negative pattern through postbaking at 110 degrees C after exposure to UV light, followed by developing with a 0.3% aqueous tet ramethylammonium hydroxide solution at room temperature.