Semiconductor-like properties of sputtered FexCu1-x thin films

Amorphous FexCu1-x thin films with x ranging from 0.21 to 0.81 have been ob tained by rf-magnetron sputtering. The structure and the electric transport properties of the films can be controlled by both the composition and anne aling temperature. The resistances of the films decrease with the temperatu re increasing from 12 to 300 K, which is the typical semiconductor characte ristic. After annealing at 400 degrees C for 5 h, the amorphous FexCu1-x th in film is crystallized and exhibits electric transport property an normal metal film. The dependence of resistance-temperature characteristics of the films on the composition and deposition time is described.