Cubic-BN-like structure of B-C-N films synthesized by plasma source ion nitriding

Citation
Mk. Lei et al., Cubic-BN-like structure of B-C-N films synthesized by plasma source ion nitriding, CHIN PHYS L, 16(1), 1999, pp. 71-73
Citations number
16
Categorie Soggetti
Physics
Journal title
CHINESE PHYSICS LETTERS
ISSN journal
0256307X → ACNP
Volume
16
Issue
1
Year of publication
1999
Pages
71 - 73
Database
ISI
SICI code
0256-307X(1999)16:1<71:CSOBFS>2.0.ZU;2-V
Abstract
Plasma source ion nitriding has emerged as a low-temperature, low-pressure nitriding approach for implanting nitrogen ions and then diffusing them int o bulk materials. The ion-plating B-C films were nitrided to synthesize B-C -N films at a nitriding temperature from 300 to 500 degrees C. The x-ray ph otoelectron spectroscopy and diffuse reflectance Fourier transform infrared spectra analyses showed that the amorphous B-C-N films synthesized at 500 degrees C are composed mainly of cubic-BN-like and hexagonal-BN-like plain microdomains. The higher nitriding temperature contributes to the formation of cubic-BN-like B-C-N structure in the B-C-N films.