Improved AlGaAs/InGaAs HFETs due to double doped-channel design

Authors
Chien, FT Chan, YJ
Citation
Ft. Chien et Yj. Chan, Improved AlGaAs/InGaAs HFETs due to double doped-channel design, ELECTR LETT, 35(5), 1999, pp. 427-428
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
5
Year of publication
1999
Pages
427 - 428
Database
ISI
SICI code
0013-5194(19990304)35:5<427:IAHDTD>2.0.ZU;2-B
Abstract
Double doped-channel AlGaAs/InGaAs field effect transistors (D-DCFETs) have been proposed, fabricated, arid compared with conventional doped-channel F ETs (DCFETs). This double doped-channel design provides a higher current de nsity, and a linear operation range over a wider dynamic range. These advan tages suggest that the double doped-channel design is more suitable for lin ear and high power microwave device applications.