SiGe p-channel MOSFETs with tungsten gate

A self-aligned SiGe p-channel MOSFET tungsten gate process with 0.1 mu m re solution is demonstrated. Interface charge densities of MOS capacitors real ised with the low pressure sputtered tungsten process are comparable with t hermally evaporated aluminium gale technologies (5 X 10(10)cm(-2) and 2 X 1 0(11)cm(-2) for W and Al, respectively). Initial results from 1 mu m gate l ength SiGe p-channel MOSFETs using the tungsten-based process show devices with a transconductance of 33mS/mm and effective channel mobility of 190cm( 2)/Vs.