A novel high-Q and wide-frequency-range inductor using Si 3-D MMIC technology

Authors
Kamogawa, K Nishikawa, K Toyoda, I Tokumitsu, T Tanaka, M
Citation
K. Kamogawa et al., A novel high-Q and wide-frequency-range inductor using Si 3-D MMIC technology, IEEE MICR G, 9(1), 1999, pp. 16-18
Citations number
15
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE MICROWAVE AND GUIDED WAVE LETTERS
ISSN journal
10518207 → ACNP
Volume
9
Issue
1
Year of publication
1999
Pages
16 - 18
Database
ISI
SICI code
1051-8207(199901)9:1<16:ANHAWI>2.0.ZU;2-Y
Abstract
A novel high-Q and wide-frequency-range inductor formed using three-dimensi onal (3-D) monolithic microwave integrated circuit (MMIC) technology on a c onductive Si substrate is presented. A fabricated 1.24-nH spiral inductor a chieves the very high resonant frequency of 29.3 GHz and maximum quality fa ctor(Q) of 45.77 owing to thick dielectric layers and a ground plane that o verlays the substrate. The measured results show that the Si 3-D MMIC is ve ry suitable for realizing single-chip and mixed-mode transceivers for L-ban d to Ku-band applications.