High-power V-band Ga0.51In0.49P/In0.2Ga0.8As pseudomorphic HEMT grown by gas source molecular beam epitaxy

A 0.1-mu m T-gate pseudomorphic Ga0.51In0.49P/In-0.2 Ga0.8As/GaAs high elec tron mobility transistor (PM-HEMT) has been successfully developed on GaAs substrate, Each technological step has: been optimized as the growth by gas source molecular beam epitaxy (GSMBE), the ohmic contacts, and the gate re cess for high-frequency applications. This device with a single delta dopin g exhibits excellent de and radio frequency (RF) performances with a curren t density of 700 mA/mm in combination with a high breakdown voltage of 9 V, an extrinsic transconductance Gm higher than 700 mS/mm, and a current gain cutoff frequency Ft of 120 GHz at V-ds = 2 V, Power measurements at 60 GHz hale been performed on these devices. They have demonstrated a maximum out put power density of 560 mW/mm with 4.6-dB power gain and a power-added eff iciency (PAE) of 22.5%. These are the first power results at V-band ever re ported for GaInP/InGaAs/GaAs pseudomorphic HEMT's.