Monolithic GaAs phase shifter circuit with low insertion loss and continuous 0-360 degrees phase shift at 20 GHz

Citation
As. Nagra et al., Monolithic GaAs phase shifter circuit with low insertion loss and continuous 0-360 degrees phase shift at 20 GHz, IEEE MICR G, 9(1), 1999, pp. 31-33
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE MICROWAVE AND GUIDED WAVE LETTERS
ISSN journal
10518207 → ACNP
Volume
9
Issue
1
Year of publication
1999
Pages
31 - 33
Database
ISI
SICI code
1051-8207(199901)9:1<31:MGPSCW>2.0.ZU;2-W
Abstract
We present here a circuit capable of continuous 0-360 degrees phase shift a t 20 GHz with only 4.2 dB of insertion loss. The phase shifter employs a va riable,velocity transmission line obtained bq periodically loading a coplan ar waveguide (CPW) line with GaAs Schottky diodes. The circuit is fabricate d on GaAs using monolithic fabrication techniques that are compatible with commercial GaAs foundry processes. To the best of our knowledge, this circu it has the lowest reported insertion loss for a monolithic solid state phas e shifter operating at 20 GHz.