A fringing field dependent 2-D model for non-uniformly doped short channelMOSFETs

Authors
Saleem, R Thomas, C Haldar, S Gupta, RS
Citation
R. Saleem et al., A fringing field dependent 2-D model for non-uniformly doped short channelMOSFETs, INT J ELECT, 86(4), 1999, pp. 381-390
Citations number
17
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
INTERNATIONAL JOURNAL OF ELECTRONICS
ISSN journal
00207217 → ACNP
Volume
86
Issue
4
Year of publication
1999
Pages
381 - 390
Database
ISI
SICI code
0020-7217(199904)86:4<381:AFFD2M>2.0.ZU;2-B
Abstract
An improved two-dimensional analysis of non-uniformly doped enhancement-mod e MOSFETs is presented. The fringing field effect, a major constraint in mi niaturization, is accurately incorporated to develop close-form expressions for the channel electric field, threshold voltage and drain current of sho rt channel MOSFETs. The close agreement with experimental/simulated data va lidates the model for design and optimization of short-channel MOSFETs for VLSI applications.