An improved two-dimensional analysis of non-uniformly doped enhancement-mod
e MOSFETs is presented. The fringing field effect, a major constraint in mi
niaturization, is accurately incorporated to develop close-form expressions
for the channel electric field, threshold voltage and drain current of sho
rt channel MOSFETs. The close agreement with experimental/simulated data va
lidates the model for design and optimization of short-channel MOSFETs for
VLSI applications.