Determination of plasma frequency and the pulse relaxation time in doped semiconductors by FIR surface waves

Citation
V. Vaicikauskas et al., Determination of plasma frequency and the pulse relaxation time in doped semiconductors by FIR surface waves, INT J INFRA, 20(3), 1999, pp. 439-445
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES
ISSN journal
01959271 → ACNP
Volume
20
Issue
3
Year of publication
1999
Pages
439 - 445
Database
ISI
SICI code
0195-9271(199903)20:3<439:DOPFAT>2.0.ZU;2-1
Abstract
The Surface Electromagnetic waves method was applied for determination of p lasma frequency and pulse relaxation time in doped A(3)B(5) semiconductors. The influence of plasmon phonon interaction, nonparabolity of the conducti on band, electron scattering peculiarities, presence of disturbed layers ar e under consideration.