CREATION OF P-B INTERFACE DEFECTS IN THERMAL SI SIO2 THROUGH ANNEALING - COMMENT/

Authors
STATHIS JH
Citation
Jh. Stathis, CREATION OF P-B INTERFACE DEFECTS IN THERMAL SI SIO2 THROUGH ANNEALING - COMMENT/, Journal of physics. Condensed matter, 9(15), 1997, pp. 3297-3298
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
Journal title
Journal of physics. Condensed matter → ACNP
ISSN journal
09538984
Volume
9
Issue
15
Year of publication
1997
Pages
3297 - 3298
Database
ISI
SICI code
0953-8984(1997)9:15<3297:COPIDI>2.0.ZU;2-7
Abstract
Some suggestions are offered to explain the discrepancies between the work of Stesmans and others.