CREATION OF P-B INTERFACE DEFECTS IN THERMAL SI SIO2 THROUGH ANNEALING - COMMENT - REPLY/

Regarding the electron spin resonance work (Stesmans and Afanas'ev (19 96) J. Phys.: Condens. Matter 8 L505) reporting on a newly resolved P- b interface defect generation mechanism operative during postoxidation annealing in inert ambient above similar to 640 degrees C, Stathis (J . Phys.: Condens. Matter 9 3297) criticizes that no explanation has be en offered for this finding vis-a-vis apparently deviating previous wo rk. Additionally, it is insinuated that previous crucial P-b results h ave been obtained only after postoxidation annealing. We show these co mments to be based on the overlooking of plain experimental facts.