Hybrid polydimethylsiloxane-zirconium oxo nanocomposites. Part 1 Characterization of the matrix and the siloxane-zirconium oxo interface

Citation
C. Guermeur et al., Hybrid polydimethylsiloxane-zirconium oxo nanocomposites. Part 1 Characterization of the matrix and the siloxane-zirconium oxo interface, J MAT CHEM, 9(3), 1999, pp. 769-778
Citations number
78
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS CHEMISTRY
ISSN journal
09599428 → ACNP
Volume
9
Issue
3
Year of publication
1999
Pages
769 - 778
Database
ISI
SICI code
0959-9428(199903)9:3<769:HPONP1>2.0.ZU;2-A
Abstract
Hybrid materials made from polydimethylsiloxane and zirconium oxo species h ave been synthesized. They exhibit a high degree of homogeneity and dispers ion for Zr/Si molar ratios ranging between 0.2 and 0.9. These hybrid materi als show good mechanical integrity and transparency. They have been charact erized by Si-29, O-17 and C-13 MAS-NMR as well as FTIR, SAXS and dynamic me chanical analysis (DMA). These polydimethylsiloxane/zirconium oxopolymers a re hybrids which consist of amorphous zirconium oxo domains of about one to two nanometers in diameter. The mean correlation distance between the zirc onium-oxo domains decreases from about 6 to 2 nm when the Zr/Si ratio incre ases. The siloxane species (chains and loops) have an average chain length that decreases from approximatively 15-20 silicon atoms to 3 silicon atoms with increasing zirconium content. The interface between siloxane and zirco nium oxo domains is composed primarily of Zr-O-Si(CH3)(2) bonds and hydroge n bonds, their relative proportion being a function of the zirconium conten t. The curing of these hybrid materials at 140 degrees C completes consolid ation of the hybrid network, without affecting the overall characteristics of the organic-inorganic interface. Curing at 200 degrees C induces the los s of small silicic species and the increase of cross-linking points in the siloxane regions. For samples with a high zirconium content (Zr/Si = 0.9) c uring at 200 degrees C also induces an increase in the number of the Zr-O-S i interface bonds.