Transient acceleration process of electrons in ZnS-type thin film electroluminescence devices

Citation
H. Zhai et al., Transient acceleration process of electrons in ZnS-type thin film electroluminescence devices, J PHYS-COND, 11(9), 1999, pp. 2145-2151
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
09538984 → ACNP
Volume
11
Issue
9
Year of publication
1999
Pages
2145 - 2151
Database
ISI
SICI code
0953-8984(19990308)11:9<2145:TAPOEI>2.0.ZU;2-D
Abstract
The transient acceleration process of electrons in ZnS-type thin film elect roluminescent devices is studied in detail for the first time through the M onte Carlo method. The transient time and drift length before the balance o f acceleration and scattering are of the order of 200 fs and 30 nm respecti vely. The steady average kinetic energy of electrons increases with electri c field. Field emission processes of electrons trapped at interface states only affect me transient process of electron transport and have no influenc e on the steady state. New explanations of the 'dead layer' phenomenon and the overshoot in the average drift velocity are proposed based on our calcu lation results.