Dislocation processes during the deformation of MoSi2 single crystals in asoft orientation

Citation
S. Guder et al., Dislocation processes during the deformation of MoSi2 single crystals in asoft orientation, MAT SCI E A, 261(1-2), 1999, pp. 139-146
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
ISSN journal
09215093 → ACNP
Volume
261
Issue
1-2
Year of publication
1999
Pages
139 - 146
Database
ISI
SICI code
0921-5093(19990315)261:1-2<139:DPDTDO>2.0.ZU;2-Q
Abstract
In situ straining experiments in a high-voltage electron microscope have be en carried out for the first time on MoSi2 single crystals between 800 and 1000 degrees C along a soft [201] orientation. Dislocations with 1/2[111]Bu rgers vectors were formed in localised sources leading to almost planar sli p. The dislocations were strictly arranged along 60 degrees and edge orient ations and moved at high velocities or in a viscous way. These observations are correlated to the macroscopic deformation behaviour and interpreted by the formation of intrinsic point defect atmospheres around the moving disl ocations. The model explains the 'inverse' dependence of the strain rate se nsitivity of the flow stress on the strain rate. (C) 1999 Elsevier Science S.A. All rights reserved.