In situ straining experiments in a high-voltage electron microscope have be
en carried out for the first time on MoSi2 single crystals between 800 and
1000 degrees C along a soft [201] orientation. Dislocations with 1/2[111]Bu
rgers vectors were formed in localised sources leading to almost planar sli
p. The dislocations were strictly arranged along 60 degrees and edge orient
ations and moved at high velocities or in a viscous way. These observations
are correlated to the macroscopic deformation behaviour and interpreted by
the formation of intrinsic point defect atmospheres around the moving disl
ocations. The model explains the 'inverse' dependence of the strain rate se
nsitivity of the flow stress on the strain rate. (C) 1999 Elsevier Science
S.A. All rights reserved.