Creep and fatigue properties of high temperature silicides and their composites

Citation
K. Sadananda et al., Creep and fatigue properties of high temperature silicides and their composites, MAT SCI E A, 261(1-2), 1999, pp. 223-238
Citations number
48
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
ISSN journal
09215093 → ACNP
Volume
261
Issue
1-2
Year of publication
1999
Pages
223 - 238
Database
ISI
SICI code
0921-5093(19990315)261:1-2<223:CAFPOH>2.0.ZU;2-Q
Abstract
A review of creep and fatigue behavior of high temperature silicides and th eir composites is presented along with new results pertaining to titanium s ilicides and functionally graded materials. The emphasis was placed on the molybdenum disilicides and their composites in comparison to other silicide s and high temperature ceramics. It was shown that the grain size effects o n creep are significant in these materials. The effects were present not on ly in the Newtonian creep but persists even in the power-law creep, with gr ain size exponents of the order of 4.2. Factors that influenced the grain s ize effects were examined. This anomalous behavior, which appeared to be ex hibited by some stoichiometric intermetallics, could not be explained by th e currently known theories of grain boundary creep. Effects of alloying and reinforcement on creep rates were also discussed. The creep rates in other high temperature silicides were compared. It was shown that molybdenum dis ilicide with silicon nitride has a potential for high temperature applicati ons in terms of its creep and oxidation resistance, although its creep resi stance appears to be much less than that of an advanced Si3N4, such as AS80 0. Published results on fatigue crack growth in MoSi2 and its composites we re analyzed using the recently developed Unified Approach for Fatigue. (C) 1999 Elsevier Science S.A. All rights reserved.