Modelling of initial stage of silicon epitaxy on porous silicon (111) surface

The mechanism of Si epitaxy on porous Si(lll) is studied by the Monte-Carlo method. Gilmer model of the surface atom diffusion generalized for the cas e of relief surface morphology is applied for the simulation. It is shown t hat for Si(lll) the epitaxy proceeds via the formation of metastable nuclei at pore edges which are stabilized by the attachment of new atoms forming the thin pendant continuous layer over pores. Three-dimensional images of n ear surface layer at various stages; of epitaxy are obtained. The dependenc e of epitaxy kinetics upon the number of deposited atoms for various porosi ty is established.