Gamma-X tunneling in GaAs/AlAs/GaAs heterostructure

Authors
Khanin, Y Vdovin, E Novoselov, K Dubrovskii, Y Omling, P Carlsson, SB Maan, JK
Citation
Y. Khanin et al., Gamma-X tunneling in GaAs/AlAs/GaAs heterostructure, PHYS LOW-D, 1-2, 1999, pp. 227-232
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICS OF LOW-DIMENSIONAL STRUCTURES
ISSN journal
02043467 → ACNP
Volume
1-2
Year of publication
1999
Part
2
Pages
227 - 232
Database
ISI
SICI code
0204-3467(1999)1-2:<227:GTIGH>2.0.ZU;2-#
Abstract
Tunneling via X valley related states is investigated in a GaAs/AlAs/GaAs s ingle-barrier structures. Features in the tunnel current which are observed experimentally are associated with resonant tunneling through X-valley AlA s quantum well states derived from conduction band minima both perpendicula r (X-x and X-y) and parallel (X-z) to the (100) growth direction and Si-don or states:linked to X valley. Tunnelling through impurity; states associate d with X-z and X-x,X-y valleys is observed for the first time.