Growth of superconducting RBa2Cu3O7-delta on silicon: Choice of a buffer layer

We deposited two different materials as a buffer layer for the growth of th in RBa2Cu3O7-delta (RBCO) films R standing for Y or Dy: SrTiO3 and Yttria-S tabilized-Zirconia (YSZ). Although highly (100)-oriented were obtained, the SrTiO3 buffer layers onto Si did not allow the growth of high quality DBCO films. On the contrary the YBCO films deposited on CeO2 / YSZ onto Si show ed very good structural and electrical properties. Given these two examples and the literature data, two parameters that may be critical for the succe ssful epitaxial growth of oxide thin films on Si are pointed out.