Deposition of thin NdNiO3 films on Si(100) by RF sputtering

Authors
Laffez, P Zaghrioui, M Lacorre, P Brousse, T Monot, L
Citation
P. Laffez et al., Deposition of thin NdNiO3 films on Si(100) by RF sputtering, VIDE, 53(289), 1998, pp. 607
Citations number
9
Categorie Soggetti
Material Science & Engineering
Journal title
VIDE-SCIENCE TECHNIQUE ET APPLICATIONS
ISSN journal
12660167 → ACNP
Volume
53
Issue
289
Year of publication
1998
Database
ISI
SICI code
1266-0167(1998)53:289<607:DOTNFO>2.0.ZU;2-I
Abstract
NdNiO3 thin films with metal-insulator transition were deposited by RF sput tering and subsequent annealing under oxygen pressure on silicon (100). The deposition parameters and annealing conditions were optimized. Reproducibl e Metal-insulator transition were obtained at 147 K.