THE TEMPERATURE-DEPENDENCE OF THE BAND-GAPS IN NARROW-GAP SEMICONDUCTORS

Authors
BOUARISSA N AOURAG H
Citation
N. Bouarissa et H. Aourag, THE TEMPERATURE-DEPENDENCE OF THE BAND-GAPS IN NARROW-GAP SEMICONDUCTORS, Infrared physics & technology, 38(3), 1997, pp. 153-161
Citations number
32
Categorie Soggetti
Optics,"Physics, Applied
Journal title
Infrared physics & technology → ACNP
ISSN journal
13504495
Volume
38
Issue
3
Year of publication
1997
Pages
153 - 161
Database
ISI
SICI code
1350-4495(1997)38:3<153:TTOTBI>2.0.ZU;2-K
Abstract
We calculate the dependence of the direct and indirect band gaps on te mperature in the narrow-gap semiconductors InAs and InSb. Our calculat ions are based on the empirical pseudopotential method. The obtained r esults compare reasonably well with available experimental data. (C) 1 997 Published by Elsevier Science B.V.