C. Pham-huu et al., High surface area silicon carbide doped with zirconium for use as catalystsupport. Preparation, characterization and catalytic application, APP CATAL A, 180(1-2), 1999, pp. 385-397
Zirconium doped SiC with a surface area from 88 to 200 m(2) g(-1) was synth
esized using the shape memory concept method followed by calcination in air
at a temperature of less than or equal to 480 degrees C. The material obta
ined was composed of beta-SiC and small ZrO2 particles dispersed throughout
the material matrix and a significant amount of an amorphous phase contain
ing Si, Zr and O, Molybdenum oxycarbide, the active isomerization phase, su
pported on such a material displayed a similar behavior to that obtained on
pure SiC for the n-heptane isomerization reaction. A comparison made with
the molybdenum oxycarbide catalyst supported on pure ZrO2 showed that the Z
r doped SiC was not simply made of silicon carbide coated with a layer of Z
rO2 on the surface but probably an amorphous phase containing Si, Zr and O
which displays a similar behavior as pure SiC. (C) 1999 Elsevier Science B.
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