Near-field photolithography with a solid immersion lens

Citation
Lp. Ghislain et al., Near-field photolithography with a solid immersion lens, APPL PHYS L, 74(4), 1999, pp. 501-503
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
4
Year of publication
1999
Pages
501 - 503
Database
ISI
SICI code
0003-6951(19990125)74:4<501:NPWASI>2.0.ZU;2-M
Abstract
We have exposed 190 nm lines in photoresist by focusing a laser beam (lambd a=442 nm) in a solid immersion lens (SIL) that is mounted on a flexible can tilever and scanned by a modified commercial atomic force microscope. The s can rate was 1 cm/s, which is several orders of magnitude faster than typic al reports of near-field lithography using tapered optical fibers. The enha nced speed is a result of the high optical efficiency (about 10(-1)) of the SIL. Once exposed with the SIL, the photoresist was developed and the patt ern was transferred to the silicon substrate by plasma etching. (C) 1999 Am erican Institute of Physics. [S0003-6951(99)05204-3].