1.5 mu m infrared photoluminescence phenomena in Er-doped porous silicon

We analyze the photoluminescence (PL) in nanoporous Si (po-Si) doped with E r by electrochemical deposition and by spin-on doping. Two kinds of optical ly active Er centers appear in electrochemically doped po-Si with the main sharp and intense lines at 1.548 and 1.539 mu m, respectively. The features characteristic for the spin-on doping method are: intense dislocation-rela ted PL at 1.53 mu m and strong luminescent activity of the silica gel used for Er doping. High-temperature PL observed up to 360 K is attributed to Er centers incorporated in the silica-like matrix at the oxidized surface of electrochemically doped po-Si and in erbium-containing silica gel. (C) 1999 American Institute of Physics. [S0003-6951(99)01804-5].