Spontaneous self-embedding of three-dimensional SiGe islands

It is shown that, under appropriate conditions, high-Ge-concentration coher ent three-dimensional SiGe islands grown on Si(100) self-embed in a matrix of a low-Ge-concentration alloy. The process may be more generally useful f or preserving the shape of self-assembled "quantum dot" islands during embe dding in a matrix material. (C) 1999 American Institute of Physics. [S0003- 6951(99)05104-9].