Piezoelectric polarization associated with dislocations in wurtzite GaN

Citation
C. Shi et al., Piezoelectric polarization associated with dislocations in wurtzite GaN, APPL PHYS L, 74(4), 1999, pp. 573-575
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
4
Year of publication
1999
Pages
573 - 575
Database
ISI
SICI code
0003-6951(19990125)74:4<573:PPAWDI>2.0.ZU;2-5
Abstract
The piezoelectric polarization and its associated charge density are calcul ated for edge, screw, and mixed dislocations oriented parallel to the c axi s in wurtzite GaN. It is shown that the polarization field generated by scr ew components of dislocations is divergence free, and thus does not generat e electric fields. Edge dislocations produce polarization fields that have nonzero divergence only at interfaces. These characteristics minimize the e lectrical and optical effects of the dislocations mediated by the piezoelec tric effect. (C) 1999 American Institute of Physics. [S0003-6951(99)05304-8 ].