Influence of tunneling voltage on the imaging of carbon nanotube rafts by scanning tunneling microscopy

Citation
Lp. Biro et al., Influence of tunneling voltage on the imaging of carbon nanotube rafts by scanning tunneling microscopy, APPL PHYS L, 73(25), 1998, pp. 3680-3682
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
73
Issue
25
Year of publication
1998
Pages
3680 - 3682
Database
ISI
SICI code
0003-6951(199812)73:25<3680:IOTVOT>2.0.ZU;2-L
Abstract
The influence of bias voltage on the quality of scanning tunneling microsco py images of carbon nanotube "rafts" was investigated in the range from -1 to 1 V in combination with scanning tunneling spectroscopy (STS) measuremen ts. While for positive tip polarity only a slight voltage dependence was fo und in the image quality, for negative polarity a strong increase of the no ise was observed with increasing voltage. STS showed that, for negative tip polarity, the tunneling current may be different in different locations by several orders of magnitude. (C) 1998 American Institute of Physics. [S000 3-6951(98)05151-1].