Fowler-Nordheim tunneling of holes through thermally grown SiO2 on p(+) 6H-SiC

Fowler-Nordheim tunneling of holes through thermally grown silicon dioxide on GH-silicon carbide is reported. Oxides of 5.2, 10, and 13.2 nm thickness were grown on the p(+) face of a p(+)n SIC junction. The p(+)n junction se rved to separate the electron and hole tunneling currents. Hole tunneling w as found to be the dominant current mechanism through the oxide. Fowler-Nor dheim analysis, using a parabolic E-K relationship, was performed to extrac t a barrier height-effective mass product, Phi(B)(3/2)(m(ox)/m(0))(1/2), fo r electrons and holes of 2.88% +/- 4.9% and 2.38% +/- 3.8% (V-3/2) respecti vely. An estimate for the effective mass of holes within the oxide was made using both the parabolic and Franz dispersion relations. (C) 1998 American Institute of Physics. [S0003-6951(98)00451-3].