Complete suppression of boron transient-enhanced diffusion and oxidation-enhanced diffusion in silicon using localized substitutional carbon incorporation

In this letter, we show the ability, through introduction of a thin Si1-x-y GexCy layer, to eliminate the enhancement of enhanced boron diffusion in si licon due to an oxidizing surface or ion implant damage. This reduction of diffusion is accomplished through a low-temperature-grown thin epitaxial Si 1-x-yGexCy layer which completely filters our excess interstitials introduc ed by oxidation or ion implant damage. We also quantify the oxidation-enhan ccd diffusion (OED) and transient-enhanced diffusion (TED) dependence on su bstitutional carbon level, and further report both the observation of carbo n TED and OED, and its dependence on carbon levels. (C) 1998 American Insti tute of Physics. [S0003-6951(98)00651-2].