Pressure and temperature dependence of the absorption edge of a thick Ga0.92In0.08As0.985N0.015 layer

We have studied the pressure and temperature dependence of the absorption e dge of a 4-mu m-thick layer of the alloy Ga0.92In0.08As0.985N0.015. We have measured the hydrostatic pressure coefficient of the energy gap of this al loy to be 51 meV/GPa, which is more than a factor two lower than that of Ga As (116 meV/GPa). This surprisingly large lowering of the pressure coeffici ent is attributed to the addition of only similar to 1.5% nitrogen. In addi tion, the temperature-induced shift of the edge is reduced by the presence of nitrogen. We can explain this reduction by the substantial decrease of t he dilatation term in the temperature dependence of the energy gap. (C) 199 8 American Institute of Physics. [S0003-6951(98)01251-0].