Intensity-invariant subpicosecond absorption saturation in heavy-ion irradiated bulk GaAs

Authors
Stelmakh, N Mangeney, J Alexandrou, A Portnoi, EL
Citation
N. Stelmakh et al., Intensity-invariant subpicosecond absorption saturation in heavy-ion irradiated bulk GaAs, APPL PHYS L, 73(25), 1998, pp. 3715-3717
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
73
Issue
25
Year of publication
1998
Pages
3715 - 3717
Database
ISI
SICI code
0003-6951(199812)73:25<3715:ISASIH>2.0.ZU;2-K
Abstract
We demonstrate that bulk GaAs irradiated by heavy Au+ ions shows efficient saturable absorption with subpicosecond recovery time and without any relax ation rate saturation up to excitation densities as high as 1.6 mJ/cm(2). A comparison with other types of ion irradiation shows that heavy-ion-irradi ated GaAs is a very promising material for ultrafast optoelectronics and op tical processing at high repetition rates. (C) 1998 American Institute of P hysics. [S0003-6951(98)00851-1].