INDIUM TIN OXIDE TRANSPARENT ELECTRODES FOR BROAD-AREA TOP-EMITTING VERTICAL-CAVITY LASERS FABRICATED USING A SINGLE LITHOGRAPHY STEP

Authors
CHUA CL THORNTON RL TREAT DW YANG VK DUNNROWICZ CC
Citation
Cl. Chua et al., INDIUM TIN OXIDE TRANSPARENT ELECTRODES FOR BROAD-AREA TOP-EMITTING VERTICAL-CAVITY LASERS FABRICATED USING A SINGLE LITHOGRAPHY STEP, IEEE photonics technology letters, 9(5), 1997, pp. 551-553
Citations number
5
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
9
Issue
5
Year of publication
1997
Pages
551 - 553
Database
ISI
SICI code
1041-1135(1997)9:5<551:ITOTEF>2.0.ZU;2-6
Abstract
We report for the first time top emitting buried oxide vertical cavity lasers using transparent indium tin oxide electrodes, Our process ena bles broad-area VCSEL's to be fabricated in a single lithography step, thus allowing the fast turn-around time necessary for evaluating VCSE L epitaxial materials. The ITO contacts attain a peak transmission of 96%, a specific contact resistance of 10(-5) Omega . cm(2), and a shee t resistivity of 2.5x10(-4) Omega . cm. Under room temperature CW pump ing, the devices exhibit a minimum threshold current density of 1.2 kA /cm(2) at a wavelength of 801 nm, and have a maximum light output powe r of 5.2 mW.