QUANTUM-WELL INTERMIXING IN GAAS-ALGAAS STRUCTURES USING PULSED-LASERIRRADIATION

We report the use of a pulsed laser irradiation technique, using multi photon absorption, to promote quantum-well intermixing (QWI) in double -quantum-well (DQW) GaAs-AlGaAs laser structures, The process requires neither ion implantation nor the deposition of dielectric caps, Diffe rential bandgap shifts of up to 40 meV have been obtained between the control and the laser irradiated samples, Bandgap tuned lasers were fa bricated from the intermixed samples and exhibited negligible changes in slope efficiency and only small increases (15%) in threshold curren t compared to as-grown devices.