MONOLITHIC INTEGRATION OF SEEDS AND VLSI GAAS CIRCUITS BY EPITAXY ON ELECTRONICS

Using the epitaxy-on electronics (EoE) process, self-electrooptic effe ct devices (SEED's) have been monolithically integrated with VLSI GaAs electronics., The EoE approach provides both depletion-mode and enhan cement-mode MESFET's for large-scale, high-density optoelectronic circ uits, The performance of SEED's grown by molecular beam epitaxy at a r educed temperature compatible with the EoE process is shown to be robu st, and modulators with contrast ratios of 2.3:1 at 7.5-V bias have be en integrated on commercially processed VLSI GaAs circuits, The EoE-SE ED process offers potential improvements over the FET-SEED process, fa cilitating the applications of SEED's in free-space optical switching and computing.