HIGH-PERFORMANCE MSM PHOTODETECTORS USING CU SCHOTTKY CONTACTS

Authors
DAVIDSON AC WISE FW COMPTON RC EMERSON DT SHEALY JR CURRIE M WANG CC
Citation
Ac. Davidson et al., HIGH-PERFORMANCE MSM PHOTODETECTORS USING CU SCHOTTKY CONTACTS, IEEE photonics technology letters, 9(5), 1997, pp. 657-659
Citations number
14
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
9
Issue
5
Year of publication
1997
Pages
657 - 659
Database
ISI
SICI code
1041-1135(1997)9:5<657:HMPUCS>2.0.ZU;2-H
Abstract
GaInAs metal-semiconductor-metal photodetectors fabricated with Cu Sch ottky contacts on an AlInAs barrier-enhancement layer are described, T he Cu electrodes were found to decrease by a factor of two the dark cu rrent of large area pads compared to pads formed with Ti, illustrating the potential for improving Schottky barriers by proper choice of met al type. The dark current density at 10 V is 3.8 pA/mu m(2) and the re sponse time is 17 ps.