A SILICON NMOS MONOLITHICALLY INTEGRATED OPTICAL RECEIVER

We report a silicon p-i-n/NMOS monolithically integrated optical recei ver, The p-i-n photodiode is a planar interdigitated structure that ha s exhibited a dark current of 1.3 pA at 5 V and quantum efficiencies o f 84 and 74% at 800 and 870 nm, respectively, Both depletion- and enha ncement-mode MOSFET's are used in the preamplifier; the effective chan nel length of the MOSFET's is 0.6 mu m. A transimpedance of 6.5 k Omeg a and a bandwidth of 130 MHz has been obtained from the preamplifier c ircuit, The sensitivities for a bit error rate of 10(-9) were -33 and -25.5 dBm at bit rates of 155 and 300 h Mb/s, respectively.