We report the fabrication and testing of a GaAs-based high-speed reson
ant cavity enhanced (RCE) Schottky photodiode, The top-illuminated RCE
detector is constructed by integrating a Schottky contact, a thin abs
orption region (In0.08Ga0.92As) and a distributed AlAs-GaAs Bragg mirr
or, The Schottky contact metal serves as a high-reflectivity top mirro
r in the RCE detector structure. The devices were fabricated by using
a microwave-compatible fabrication process, The resulting spectral pho
to response had a resonance around 895 nm, in good agreement with our
simulations, The full-width-at-half-maximum (FWHM) was 15 nm, and the
enhancement factor was in excess of 6. The photodiode had an experimen
tal setup limited temporal response of 18 ps FWHM, corresponding to a
3-dB bandwidth of 20 GHz.