Monte Carlo simulation on the cation diffusion via vacancies in simple spinels

Authors
Citation
Fh. Lu, Monte Carlo simulation on the cation diffusion via vacancies in simple spinels, COMP MAT SC, 14(1-4), 1999, pp. 48-55
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
COMPUTATIONAL MATERIALS SCIENCE
ISSN journal
09270256 → ACNP
Volume
14
Issue
1-4
Year of publication
1999
Pages
48 - 55
Database
ISI
SICI code
0927-0256(199902)14:1-4<48:MCSOTC>2.0.ZU;2-P
Abstract
The correlation factors of cations and vacancies for diffusion in simple sp inels were calculated by using the Monte Carlo simulation technique. Since the predominant point defects are cationic vacancies at high temperature an d especially at high oxygen partial pressures in many spinels, the cations are considered to move primarily via cationic vacancies in this study. Seve ral input parameters including the lattice size, the number of jumps per ca tion. etc., were optimized to calculate the correlation factors. Then the c orrelation factors of cations moving via vacancies in simple spinels were c alculated in different types of exchange jumps, i.e., diffusion that occurs on tetrahedral or octahedral or both cationic sites. Results were obtained with satisfactory accuracy. The influence of the vacancy concentration on the correlation factors was also analyzed. (C) 1999 Elsevier Science B.V. A ll rights reserved.