Design of class E power amplifier with nonlinear parasitic output capacitance

The Class E amplifier exploits the output shunt capacitor for charge-storin g during the operation cycle, The amplifier works even with a nonlinear out put capacitor, but the required component values are different from the val ues resulting with the linear capacitor. In this paper the equations and co mponent values are solved for the first time for a Class E amplifier having a nonlinear output capacitor with hyperabrupt junction voltage-capacitance characteristics. A hyperabrupt junction capacitor is present especially at the drain-to-bulk junction of practical MOS devices. The results of the an alysis are presented in plots providing initial component values for MOS Cl ass E power amplifier design. The procedure is validated with a design exam ple of a single-stage 900 MHz MOS power amplifier operating from a 2-V supp ly voltage.