Ne. Capps et al., Surface interactions of CF2 radicals during deposition of amorphous fluorocarbon films from CHF3 plasmas, J APPL PHYS, 84(9), 1998, pp. 4736-4743
Surface reactivities for CF2 radicals formed in a CHF3 plasma molecular bea
m are measured during film deposition on a variety of substrates. The imagi
ng of radicals interacting with surfaces (IRIS) technique was used to colle
ct spatially resolved laser-induced fluorescence (LIF) images of CF2 radica
ls interacting with SiO2, Si3N4, Si, 304 stainless steel, and system 8 phot
oresist substrates. Films deposited during IRIS experiments were characteri
zed using x-ray photoelectron spectroscopy and Fourier transform infrared s
pectroscopy and were found to be nearly identical in composition on all sub
strates. Simulation of LIF cross-sectional data shows high scattering coeff
icients for CF2 radicals on all substrates. These extremely large scatterin
g coefficients (>1.0) indicate that CF2 molecules are generated through pla
sma interactions with the substrate. Possible CF, surface generation mechan
isms an discussed, with consideration of CF and ion bombardment contributio
ns to the generation of CF2. (C) 1998 American Institute of Physics. [S0021
-8979(98)07721-4].