Single electron tunneling and suppression of short-channel effects in submicron silicon transistors

We report measurements on submicron metal-oxide-semiconductor field effect transistors equipped with a gate on three sides of the channel. At room tem perature, a strong suppression of short-channel effects has been achieved f or the narrowest channels. At liquid helium temperatures, the same devices exhibit clear conductance oscillations in the subthreshold regime, indicati ng that a quantum dot has formed in the disordered channel. (C) 1998 Americ an Institute of Physics. [S0021-8979(98)08320-0].