The role of size effects on the crystallization of amorphous Ge in contactwith Bi nanocrystals

The kinetics of metal-induced crystallization of amorphous Ge in contact wi th Bi nanocrystals (NCs) have been studied by in situ transmission electron microscope annealing. Series of nanostructured films consisting of layers of Bi NCs in an amorphous Ge matrix have been grown by pulsed laser deposit ion. The a-Ge crystallization temperature depends strongly on both the size and shape of the NCs and the separation between the NCs in the film-normal direction. The size of the NCs controls the crystal nucleation process thr ough the amount of metal surface in contact with the semiconductor, the sha pe of the NCs determines the initial Ge crystallization in the direction pe rpendicular to the film plane, and the separation between the NCs in the fi lm-normal direction controls the overall pattern of the Ge crystal growth p rocess. () 1998 American Institute of Physics. [S0021-8979(98)04021-3].