Pt and W ohmic contacts to p-6H-SiC by focused ion beam direct-write deposition

Low resistance Pt and W ohmic metallizations to p-type 6H-SiC, using focuse d ion beam (FIB) surface-modification and in-situ direct-write metal deposi tion without annealing, are reported. FIB(Ga) surface-modification and in-s itu deposition of Pt, and W showed minimum contact resistance values of 2.8 x 10(-4) ohm-cm(2) to 2.5 x 10(-4) ohm-cm(2), respectively A comparison wi th ex-situ pulse laser deposited Pt on surface-modified areas showed compar able cent-act resistance values and similar behavior. Auger and secondary i on mass spectroscopy analysis showed a significant (similar to 4% a.c.) inc orporation of Ga within a 15 nm distance from the SiC surface with surface- modification. Atomic force microscopy studies showed that surface-modificat ion process smooths out the SiC surface significantly.