Correlation of the electrical properties with interface crystallography inthe Ti/3C-SiC system

Characterizations were performed to determine the properties of Ti contacts to 3C-SiC. Both carbides and silicides were studied carefully following he at treatments from 600 to 1000 degrees C. The peak associated with silicide s in the Auger Si spectrum is identified. Structural and chemical analyses using Auger electron spectroscopy, x-ray photoelectron spectroscopy, and x- ray diffraction revealed how the electrical properties of the contacts corr elate with the interface chemistry. It is found that the crystalline C49 Ti Si2 formed at the interface is closely related to the lowering in the conta ct resistance. The barrier height decreases from 0.53 eV for as-deposited f ilms to 0.44 eV with annealing. The contacts maintained stable electrical c haracteristics after annealing at 600 degrees C for extended periods of tim e.